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SU8010

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  • Ultra-high resolution imaging, even at ultra low accelerating voltage (SE resolution 1.3nm at 1.0kV)
  • A wide range of signal detection systems
  • User-friendly GUI, console and wide-format monitor for comfortable operation
  • Wide range of optional accessories to meet customer-specific needs
  • SU8010 has excellent performance as the entry level model in the SU8000 series. The combination of Semi-in-lens type objective lens and cold FE-gun with small energy spread delivers ultra resolution imaging performance and flexible SE-BSE signal mixing using Hitachi's detector technology for absolute surface information. Z-number contrast and charge suppression.

Á¦Ç°»ç¾ç(Specification)

(1) Resolution
1.0nm at 15kV / 1.3nm at 1kV
(2) Magnification
On photo mode - x20 to x800,000
On display mode - x60 to x2,000,000
(3) Accelerating voltage
0.1 to 30kV
(4) Anode heating system / Aperture heating system (HITACHI patent)
(5) Detectors
Dual Secondary Electron Detector (Upper/Lower)
SE/BSE Signal Mixing Function (Upper detector)
Semiconductor type BSED (option)
YAG type BSED (option)
STEM detector for BF/DF-STEM (option)
BF-STEM aperture (option)
Cathodoluminescence Detector (option)
EBIC image observation unit (option)
(6) Maximum loading sample size
100mm dia. / 150mm dia.(option)
(7) Image saving
Max. 5,120 x 3,840 pixels

SU8220/30/40

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  • The ultimate SEM source for high resolution imaging at low acceleration voltage with unmatched beam brightness and stability
  • The newly designed Hitachi CFE gun complements the inherent high resolution and brightness of conventional CFE with increased probe current and beam stability
  • Long-term, continuous operation and elemental analysis are now routine with the new CFE source
  • The beam decelertion voltage can be optimized to yield a landing voltage of 10-2000V enabling the observation of beam sensitive samples, such as organic materials or polymers, in the natural state without beam damage or sample deformation
  • A new selective energy filtering system for the top detector offers fine contrast differentiation even at low accelerating voltages

Á¦Ç°»ç¾ç(Specification)

(1) Resolution
0.8nm at 15kV / 1.1nm at 1kV
(2) Magnification
0.8nm at 15kV / 1.1nm at 1kV
(3) Accelerating voltage
0.01 to 30kV
(4) Anode heating system / Aperture heating system (HITACHI patent)
(5) Detectors
Triple Secondary Electron Detector (Top/Upper/Lower)
SE/BSE Signal Mixing Function (Upper detector)
Top filter function (Top detector)*
Semiconductor type BSED*
YAG type BSED*
STEM detector for BF/DF-STEM*
BF-STEM aperture*
(6) Image saving
Max. 5,120 x 3,840 pixels

SU9000

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  • Superior low-kV performance for observation of beam sensitive materials.
  • Next generation Hitachi In-lens SEM optics allows for routine observation at 1 million times.
  • Newly designed CFE GUN provides high brightness and extremly stable emission current.
  • Improved vacuum technology that allows for ultra-high vacuum levels for reduced sample contamination.
  • Highly engineered instrument enclosure featuring both superior strength and stability to allow for high resolution imaging in a broad range of environmental conditions
  • Newly designed objective lens provides for high resolution imaging at low acceleration voltage.
  • Side entry sample exchange system increases throughput by reducing the time required to change samples and by automatically positioning the sample at the correct WD.

Á¦Ç°»ç¾ç(Specification)

(1) Resolution
0.4nm at 30kV (Sample height = 1.0mm)
1.2nm at 1kV (Sample height = 2.0mm)
(2) Magnification
On photo mode - x80 to x3,000,000
On display mode - x220 to x8,000,000
(3) Accelerating voltage
0.5 to 30kV
(4) Anode heating system / Aperture heating system (HITACHI patent)
(5) Detectors
Secondary Electron Detector
Top detector (option)
BF/DF Duo-STEM Detector (option)
(6) Image saving
Image saving